1. Crystallography and Product Basics of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric proportion, identified by its amazing polymorphism– over 250 well-known polytypes– all sharing solid directional covalent bonds but differing in piling sequences of Si-C bilayers.
The most highly relevant polytypes are 3C-SiC (cubic zinc blende structure), and the hexagonal kinds 4H-SiC and 6H-SiC, each displaying refined variations in bandgap, electron movement, and thermal conductivity that influence their viability for details applications.
The toughness of the Si– C bond, with a bond energy of about 318 kJ/mol, underpins SiC’s extraordinary firmness (Mohs solidity of 9– 9.5), high melting point (~ 2700 ° C), and resistance to chemical destruction and thermal shock.
In ceramic plates, the polytype is normally chosen based on the planned use: 6H-SiC prevails in structural applications as a result of its simplicity of synthesis, while 4H-SiC dominates in high-power electronic devices for its premium fee provider movement.
The large bandgap (2.9– 3.3 eV relying on polytype) likewise makes SiC an exceptional electric insulator in its pure kind, though it can be doped to work as a semiconductor in specialized electronic devices.
1.2 Microstructure and Stage Pureness in Ceramic Plates
The efficiency of silicon carbide ceramic plates is critically based on microstructural features such as grain size, density, phase homogeneity, and the visibility of additional stages or impurities.
Premium plates are generally made from submicron or nanoscale SiC powders through innovative sintering techniques, causing fine-grained, completely dense microstructures that take full advantage of mechanical toughness and thermal conductivity.
Impurities such as free carbon, silica (SiO â‚‚), or sintering help like boron or aluminum must be carefully regulated, as they can develop intergranular movies that reduce high-temperature toughness and oxidation resistance.
Residual porosity, even at low degrees (
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