1. Material Scientific Research and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms arranged in a tetrahedral lattice, primarily in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying exceptional atomic bond strength.
The Si– C bond, with a bond energy of around 318 kJ/mol, is amongst the toughest in structural ceramics, providing outstanding thermal security, solidity, and resistance to chemical assault.
This robust covalent network results in a product with a melting point exceeding 2700 ° C(sublimes), making it one of the most refractory non-oxide ceramics readily available for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC maintains mechanical strength and creep resistance at temperature levels above 1400 ° C, where many metals and conventional porcelains begin to soften or weaken.
Its low coefficient of thermal expansion (~ 4.0 × 10 â»â¶/ K) combined with high thermal conductivity (80– 120 W/(m · K)) enables fast thermal cycling without catastrophic breaking, a vital feature for crucible efficiency.
These intrinsic homes come from the well balanced electronegativity and similar atomic dimensions of silicon and carbon, which promote an extremely steady and densely loaded crystal structure.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are commonly made from sintered or reaction-bonded SiC powders, with microstructure playing a definitive function in durability and thermal shock resistance.
Sintered SiC crucibles are created through solid-state or liquid-phase sintering at temperature levels above 2000 ° C, usually with boron or carbon additives to boost densification and grain limit communication.
This procedure generates a fully thick, fine-grained structure with minimal porosity (
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